GUNN OSCILLATIONS IN INDIUM ARSENIDE - (UNIAXIAL PRESSURE EFFECT - E)

被引:26
作者
ALLEN, JW
SHYAM, M
PEARSON, GL
机构
关键词
D O I
10.1063/1.1754591
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:39 / +
页数:1
相关论文
共 4 条
[1]   BAND STRUCTURES AND PSEUDOPOTENTIAL FORM FACTORS FOR 14 SEMICONDUCTORS OF DIAMOND AND ZINC-BLENDE STRUCTURES [J].
COHEN, ML ;
BERGSTRESSER, TK .
PHYSICAL REVIEW, 1966, 141 (02) :789-+
[2]   EVIDENCE FOR IMPURITY STATES ASSOCIATED WITH HIGH-ENERGY CONDUCTION-BAND EXTREMA IN N-CDTE [J].
FOYT, AG ;
HALSTED, RE ;
PAUL, W .
PHYSICAL REVIEW LETTERS, 1966, 16 (02) :55-&
[3]   INSTABILITIES OF CURRENT IN 3-V SEMICONDUCTORS [J].
GUNN, JB .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (02) :141-&
[4]   EFFECT OF VARIATION OF ENERGY MINIMA SEPARATION ON GUNN OSCILLATIONS [J].
SHYAM, M ;
ALLEN, JW ;
PEARSON, GL .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) :63-+