EFFECT OF VARIATION OF ENERGY MINIMA SEPARATION ON GUNN OSCILLATIONS

被引:20
作者
SHYAM, M
ALLEN, JW
PEARSON, GL
机构
关键词
D O I
10.1109/T-ED.1966.15636
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:63 / +
页数:1
相关论文
共 6 条
[1]   MICROWAVE OSCILLATIONS IN GAASXP1-X ALLOYS (PULSED DC EXCITATION - E/T) [J].
ALLEN, JW ;
SHYAM, M ;
CHEN, YS ;
PEARSON, GL .
APPLIED PHYSICS LETTERS, 1965, 7 (04) :78-&
[2]   BAND STRUCTURE AND ELECTRON TRANSPORT OF GAAS [J].
EHRENREICH, H .
PHYSICAL REVIEW, 1960, 120 (06) :1951-1963
[3]   INSTABILITIES OF CURRENT IN 3-V SEMICONDUCTORS [J].
GUNN, JB .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (02) :141-&
[4]   PHENOMENOLOGICAL ASPECTS OF CW MICROWAVE OSCILLATIONS IN GaAs [J].
Hakki, B. W. ;
Knight, S. .
SOLID STATE COMMUNICATIONS, 1965, 3 (05) :89-91
[5]   MECHANISM OF GUNN EFFECT FROM A PRESSURE EXPERIMENT [J].
HUTSON, AR ;
JAYARAMAN, AG ;
CHYNOWETH, AG ;
CORIELL, AS ;
FELDMAN, WL .
PHYSICAL REVIEW LETTERS, 1965, 14 (16) :639-+
[6]   POSSIBILITY OF NEGATIVE RESISTANCE EFFECTS IN SEMICONDUCTORS [J].
RIDLEY, BK ;
WATKINS, TB .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1961, 78 (500) :293-&