RECOMBINATION PROCESSES IN TELLURIUM

被引：16

作者：

REDFIELD, D

机构：

来源：

PHYSICAL REVIEW | 1955年 / 100卷 / 04期

关键词：

D O I：

10.1103/PhysRev.100.1094

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1094 / 1100

页数：7

共 17 条

[1] AIGRAIN P, COMMUNICATION
[2] ELECTRON CAPTURE PROBABILITY OF THE UPPER COPPER ACCEPTOR LEVEL IN GERMANIUM
BAUM, RM
BATTEY, JF
[J]. PHYSICAL REVIEW, 1955, 98 (04): : 923 - 925
[3] BURSTEIN E, PHOTOCONDUCTIVITY C
[4] GOLD AS AN ACCEPTOR IN GERMANIUM
DUNLAP, WC
[J]. PHYSICAL REVIEW, 1955, 97 (03): : 614 - 629
[5] ELECTRON-HOLE RECOMBINATION IN GERMANIUM
HALL, RN
[J]. PHYSICAL REVIEW, 1952, 87 (02): : 387 - 387
[6] HAYNES JR, 1952, PHYS REV, V86, pA647
[7] TRAPPING OF MINORITY CARRIERS IN SILICON .1. P-TYPE SILICON
HORNBECK, JA
HAYNES, JR
[J]. PHYSICAL REVIEW, 1955, 97 (02): : 311 - 321
[8] INFRARED OPTICAL PROPERTIES OF SINGLE CRYSTALS OF TELLURIUM
LOFERSKI, JJ
[J]. PHYSICAL REVIEW, 1954, 93 (04): : 707 - 716
[9] MACFARLANE GC, COMMUNICATION
[10] MOSS TS, 1952, PHOTOCONDUCTIVITY