EXCITON SPIN DYNAMICS IN GAAS HETEROSTRUCTURES

被引：242

作者：

BARAD, S

BARJOSEPH, I

机构：

[1] Department of Physics, Weizmann Institute of Science

来源：

PHYSICAL REVIEW LETTERS | 1992年 / 68卷 / 03期

关键词：

D O I：

10.1103/PhysRevLett.68.349

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report the experimental observation of exciton spin relaxation in GaAs quantum wells in moderate magnetic fields. We resolve the electron and hole contributions and discuss the large sensitivity of the spin-relaxation time to exciton localization and quantum well width. We use the long duration of spin orientation to demonstrate deep transient oscillations, resulting from biexcitonic effects.

引用

页码：349 / 352

页数：4

共 20 条

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