SILICON-IMPLANTED SIO2 FOR NONVOLATILE MEMORY APPLICATIONS

被引：10

作者：

HAO, MY

HWANG, H

LEE, JC

机构：

[1] Microelectronics Research Center, Department of Electrical and Computer Engineering, University of Texas at Austin, Austin

来源：

SOLID-STATE ELECTRONICS | 1993年 / 36卷 / 09期

关键词：

D O I：

10.1016/0038-1101(93)90171-L

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

MOS capacitors with silicon-implanted oxides were studied for nonvolatile memory applications. It was found that the threshold voltages of these devices were strongly dependent on scanning voltage range for the capacitance-voltage measurements. The writing/erasing capability of these memory devices was also evaluated by applying short voltage pulses with opposite polarities. Excellent cycling and endurance characteristics were observed using +/-16 V programming voltages to at least 10(9) cycles for these Si-implanted memory devices. In addition, only a slight narrowing of threshold voltage window was detected as a function of waiting time after the devices were written/erased. The results suggest that silicon-implanted oxides might be applicable to nonvolatile memory cells.

引用

页码：1321 / 1324

页数：4

共 6 条

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