ION-BEAM-INDUCED DENSIFICATION OF SOL-GEL CERAMIC THIN-FILMS

被引：8

作者：

LEVINE, TE ^{[1
]}

REVESZ, P ^{[1
]}

GIANNELIS, EP ^{[1
]}

MAYER, JW ^{[1
]}

机构：

[1] ARIZONA STATE UNIV,DEPT CHEM BIO & MAT ENGN,TEMPE,AZ 85287

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1994年 / 12卷 / 02期

关键词：

D O I：

10.1116/1.587341

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ion-beam-induced densification of sol-gel zirconia thin films is examined here. Ion irradiation of sol-gel zirconia films leads to microstructural and chemical changes (densification) in the films. Ion beam analysis indicates the loss of carbon, hydrogen, and oxygen as a result of implantation. Oxygen:zirconium ratios less than that predicted for stoichiometric ZrO2 for the higher dose implanted films were observed. The chemical and microstructural modifications were attributed to both electronic interactions and nuclear collisions between the energetic ions and the target atoms. Densification of only a near-surface region of a sol-gel zirconia thin film proved that the effects of beam heating on the observed densification are minimal.

引用

页码：986 / 990

页数：5

共 24 条

[1] ION-IMPLANTATION-INDUCED STRESS IN GLASSES - VARIATION OF DAMAGE MODE EFFICIENCY WITH CHANGES IN GLASS STRUCTURE [J].

ARNOLD, GW .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1988, 32 (1-4) :504-507

[2] A MONTE-CARLO COMPUTER-PROGRAM FOR THE TRANSPORT OF ENERGETIC IONS IN AMORPHOUS TARGETS [J].

BIERSACK, JP ;

HAGGMARK, LG .

NUCLEAR INSTRUMENTS & METHODS, 1980, 174 (1-2) :257-269

[3]

BIERSACK JP, 1985, NUL INSTR METH B, V7, P461

[4]

Brinker C.J., 1990, SOL GEL SCI PHYS CHE

[5]

Chu W.-K., 1978, BACKSCATTERING SPECT

[6] ALGORITHMS FOR THE RAPID SIMULATION OF RUTHERFORD BACKSCATTERING SPECTRA [J].

DOOLITTLE, LR .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 9 (03) :344-351

[7] CHANGES IN THE REFRACTIVE-INDEX OF FUSED-SILICA DUE TO IMPLANTATION OF TRANSITION-METAL IONS [J].

HAGLUND, RF ;

MOGUL, HC ;

WEEKS, RA ;

ZUHR, RA .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1991, 130 (03) :326-331

[8] PHYSICAL ASPECTS OF ION-BEAM ASSISTED DEPOSITION [J].

HUBLER, GK ;

CAROSELLA, CA ;

DONOVAN, EP ;

VANVECHTEN, D ;

BASSEL, RH ;

ANDREADIS, TD ;

ROSEN, M ;

MUELLER, GP .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1990, 46 (1-4) :384-391

[9] EFFECT OF HEATING RATE ON THE SINTERING OF TITANIUM-DIOXIDE THIN-FILMS - COMPETITION BETWEEN DENSIFICATION AND CRYSTALLIZATION [J].

KEDDIE, JL ;

GIANNELIS, EP .

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1991, 74 (10) :2669-2671

[10] ION-BEAM ANALYSIS OF SILICA SOL-GEL FILMS - STRUCTURAL AND COMPOSITIONAL EVOLUTION [J].

KEDDIE, JL ;

GIANNELIS, EP .

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1990, 73 (10) :3106-3109

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