DECAY OF EXCESS CARRIER CONCENTRATION IN THERMALLY TREATED SILICON

被引：14

作者：

GLINCHUK, KD ^{[1
]}

LITOVCHE.NM ^{[1
]}

LINNIK, LF ^{[1
]}

MERKER, R ^{[1
]}

机构：

[1] ACAD SCI UKSSR,SEMICOND INST,KIEV,UKSSR

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1973年 / 18卷 / 02期

关键词：

D O I：

10.1002/pssa.2210180238

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：749 / &

共 10 条

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[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1961, 16 (10) : 1923 - &
[2] GOLD IN SILICON
BEMSKI, G
STRUTHERS, JD
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1958, 105 (10) : 588 - 591
[3] GALKIN GN, 1961, FIZ TVERD TELA, V3, P2355
[4] Decay of Excess Carriers in Semiconductors
Gardavsky, J.
[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1970, 3 (04): : 939 - 949
[5] GLINCHUK KD, 1972, POLUPROVODNIKOVAYA T, V7
[6] GLINCHUK KD, 1970, FIZ TEKH POLUPROV, V4, P847
[7] GLINCHUK KD, 1963, FIZ TVERD TELA, V5, P3150
[8] GLINCHUK KD, 1966, UKR FIZ ZH, V11, P745
[9] INFLUENCE OF HEAT TREATMENT OF SILICON ON MINORITY CARRIER LIFETIME
TOMEK, K
[J]. CZECHOSLOVAK JOURNAL OF PHYSICS, 1970, 20 (02) : 222 - &
[10] CHARACTERISTICS OF 0.93 TO 1.0 EV LUMINESCENCE BANDS IN GAAS
VOROBKALO, FM
GLINCHUK, KD
PROKHOROVICH, AV
[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1971, 7 (01): : 135 - +