SELF-ALIGNED CHEMICALLY ASSISTED ION-BEAM-ETCHED GAAS/(AL,GA)AS TURNING MIRRORS FOR PHOTONIC APPLICATIONS

被引：15

作者：

APPELMAN, H ^{[1
]}

LEVY, J ^{[1
]}

PION, M ^{[1
]}

KREBS, D ^{[1
]}

HARDING, C ^{[1
]}

ZEDIKER, M ^{[1
]}

机构：

[1] MCDONNELL DOUGLAS ELECTR SYST CO,CTR OPTO ELECTR,ELMSFORD,NY 10521

来源：

JOURNAL OF LIGHTWAVE TECHNOLOGY | 1990年 / 8卷 / 01期

关键词：

D O I：

10.1109/50.45927

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Low-loss reliable integrated turning mirrors will be important for many emerging photonic applications. We report the successful fabrication of self-aligned chemically assisted ion-beam-etched (CAIBE) turning mirrors, which are formed in epitaxially grown GaAs/(Al, Ga)As layers and appear to be promising for these applications. © 1990 IEEE

引用

页码：39 / 41

页数：3

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