HIGH-POWER ALGAAS/GAAS SINGLE QUANTUM-WELL LASERS WITH CHEMICALLY ASSISTED ION-BEAM ETCHED MIRRORS

被引：21

作者：

TIHANYI, P ^{[1
]}

WAGNER, DK ^{[1
]}

ROZA, AJ ^{[1
]}

VOLLMER, HJ ^{[1
]}

HARDING, CM ^{[1
]}

DAVIS, RJ ^{[1
]}

WOLF, ED ^{[1
]}

机构：

[1] CORNELL UNIV,NATL RES & RESOURCE FACIL SUBMICRON STRUCT,ITHACA,NY 14853

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 23期

关键词：

D O I：

10.1063/1.97753

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1640 / 1641

页数：2

共 11 条

[1] INGAASP-INP PLANAR-STRIPE LASERS FABRICATED BY WET CHEMICAL ETCHING
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[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (05) : 3176 - 3178
[2] LOW THRESHOLD GAAS/GAALAS BH LASERS WITH ION-BEAM-ETCHED MIRRORS
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RIOU, J
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[J]. ELECTRONICS LETTERS, 1985, 21 (13) : 566 - 568
[3] GALNASP-INP STRIPE-GEOMETRY LASER WITH A REACTIVE-ION-ETCHED FACET
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IGA, K
MILLER, BI
RENTSCHLER, JA
[J]. APPLIED PHYSICS LETTERS, 1980, 37 (08) : 681 - 683
[4] FONASH SJ, 1985, SOLID STATE TECHNOL, V28, P150
[5] OHMIC CONTACTS TO GAAS-LASERS USING ION-BEAM TECHNOLOGY
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TIHANYI, P
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (01) : 39 - 44
[6] PURETZ J, 1986, ELECTRON LETT, V22, P701
[7] ALGAAS/GAAS BURIED MULTIQUANTUM WELL LASERS WITH A REACTIVE ION ETCHED WINDOW FACET
SEMURA, S
OHTA, T
KURODA, T
NAKASHIMA, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (06): : L463 - L465
[8] SIMULTANEOUS DIFFUSION OF ZINC AND INDIUM INTO GAAS - A NEW APPROACH FOR THE FORMATION OF LOW RESISTANCE OHMIC CONTACTS TO COMPOUND SEMICONDUCTORS
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CHINN, SR
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (04) : 410 - 412
[9] DRY-ETCHED-CAVITY PAIR-GROOVE-SUBSTRATE GAAS/ALGAAS MULTIQUANTUM WELL LASERS
YUASA, T
MANNOH, M
ASAKAWA, K
SHINOZAKI, K
ISHII, M
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (12) : 748 - 750
[10] ANOMALOUS LENGTH DEPENDENCE OF THRESHOLD FOR THIN QUANTUM-WELL ALGAAS DIODE-LASERS
ZORY, PS
REISINGER, AR
MAWST, LJ
COSTRINI, G
ZMUDZINSKI, CA
EMANUEL, MA
GIVENS, ME
COLEMAN, JJ
[J]. ELECTRONICS LETTERS, 1986, 22 (09) : 475 - 477

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