OHMIC CONTACTS TO GAAS-LASERS USING ION-BEAM TECHNOLOGY

被引：11

作者：

LINDSTROM, C

TIHANYI, P

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1983年 / 30卷 / 01期

关键词：

D O I：

10.1109/T-ED.1983.21069

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：39 / 44

页数：6

共 18 条

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NORTH, JC ;

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HARTSOUGH, LD ;

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[7] VERY LOW RESISTANCE NI-AUGE-NI CONTACTS TO N-GAAS [J].

HEIME, K ;

KONIG, U ;

KOHN, E ;

WORTMANN, A .

SOLID-STATE ELECTRONICS, 1974, 17 (08) :835-&

[8] CRYSTAL-STRUCTURES AND ELECTRICAL-PROPERTIES OF TITANIUM FILMS EVAPORATED IN HIGH-VACUUM [J].

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MITSUHASHI, H .

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[9] NARROW STRIPE LASERS FOR OPTICAL FIBER SYSTEMS [J].

LINDSTROM, C ;

TIHANYI, P .

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[10]

LINDSTROM C, UNPUB METALLIZATION

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