CONTACT RESISTANCE MEASUREMENTS OF PLATINUM-SILICIDE AND CHROMIUM CONTACTS TO HIGHLY DOPED N-SILICON AND P-SILICON

被引：13

作者：

BOBERG, G

STOLT, L

TOVE, PA

NORDE, H

机构：

来源：

PHYSICA SCRIPTA | 1981年 / 24卷 / 02期

关键词：

D O I：

10.1088/0031-8949/24/2/012

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：405 / 407

页数：3

共 15 条

[1] THERMAL EFFECTS ON INTEGEGRITY OF ALUMINUM TO SILICON CONTACTS IN SILICON INTEGRATED CIRCUITS [J].

ANSTEAD, RJ ;

FLOYD, SR .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (04) :381-&

[2] CONTACT RESISTANCE AND CONTACT RESISTIVITY [J].

BERGER, HH .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (04) :507-&

[3] MODELS FOR CONTACTS TO PLANAR DEVICES [J].

BERGER, HH .

SOLID-STATE ELECTRONICS, 1972, 15 (02) :145-&

[4]

DAHR S, 1978, J ELECTROCHEMICAL SO, V125, P508

[5] CONTACT RESISTANCE IN METAL-SEMICONDUCTOR SYSTEMS [J].

FANG, YK ;

CHANG, CY ;

SU, YK .

SOLID-STATE ELECTRONICS, 1979, 22 (11) :933-938

[6]

GROVE AS, 1967, PHYSICS TECHNOLOGY S, P68

[7] METALLURGICAL PROPERTIES AND ELECTRICAL CHARACTERISTICS OF PALLADIUM SILICIDE-SILICON CONTACTS [J].

KIRCHER, CJ .

SOLID-STATE ELECTRONICS, 1971, 14 (06) :507-+

[8] EFFECTS OF SPUTTERING DAMAGE ON CHARACTERISTICS OF MOLYBDENUM-SILICON SCHOTTKY-BARRIER DIODES [J].

MULLINS, FH ;

BRUNNSCHWEILER, A .

SOLID-STATE ELECTRONICS, 1976, 19 (01) :47-50

[9] ELECTRICAL-PROPERTIES OF PLATINUM-SILICON CONTACT ANNEALED IN AN H-2 AMBIENT [J].

MUTA, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (06) :1089-1098

[10] AL-SI AND AL-POLY-SI CONTACT RESISTANCE IN INTEGRATED-CIRCUITS [J].

NAGUIB, HM ;

HOBBS, LH .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (04) :573-577

← 1 2 →