NEXAFS AND PHOTOEMISSION INVESTIGATION OF THE INITIAL STEP OF EPITAXIAL-GROWTH OF CAF2-SI(111)

被引：1

作者：

INCOCCIA, L

CRAMM, S

STORJOHANN, I

SENF, F

KUNZ, C

机构：

来源：

VACUUM | 1990年 / 41卷 / 4-6期

关键词：

D O I：

10.1016/0042-207X(90)93828-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Monolayers of CaF2 on Si(111) are characterized by photoemission spectra of the valence and core electrons. Three different phases can be distinguished, depending on the annealing temperature. The near edge structure at teh F 1s edge was found to be strongly polarization dependent. By comparison of these absorption spectra with X-α-SCF cluster calculations, and with bulk spectra SiF bonding can be ruled out, a Ca bonded interface being ascertained. © 1990.

引用

页码：941 / 942

页数：2

共 7 条

[1] EVIDENCE FOR THE INFLUENCE OF INTERFACIAL ATOMIC-STRUCTURE ON ELECTRICAL-PROPERTIES AT THE EPITAXIAL CAF2/SI(111) INTERFACE [J].

BATSTONE, JL ;

PHILLIPS, JM ;

HUNKE, EC .

PHYSICAL REVIEW LETTERS, 1988, 60 (14) :1394-1397

[2] DETERMINATION OF INTERFACE STATES FOR CAF2/SI(111) FROM NEAR-EDGE X-RAY-ABSORPTION MEASUREMENTS [J].

HIMPSEL, FJ ;

KARLSSON, UO ;

MORAR, JF ;

RIEGER, D ;

YARMOFF, JA .

PHYSICAL REVIEW LETTERS, 1986, 56 (14) :1497-1500

[3]

HIMPSEL FJ, 1987, MATER RES SOC S P, V94, P181

[4]

INCOCCIA L, IN PRESS

[5] PHOTOEMISSION-STUDY OF BONDING AT THE CAF2-ON-SI(111) INTERFACE [J].

OLMSTEAD, MA ;

UHRBERG, RIG ;

BRINGANS, RD ;

BACHRACH, RZ .

PHYSICAL REVIEW B, 1987, 35 (14) :7526-7532

[6] ELECTRONIC-STRUCTURE OF THE CAF2/SI(111) INTERFACE [J].

RIEGER, D ;

HIMPSEL, FJ ;

KARLSSON, UO ;

MCFEELY, FR ;

MORAR, JF ;

YARMOFF, JA .

PHYSICAL REVIEW B, 1986, 34 (10) :7295-7306

[7] STRUCTURE OF THE SI(111)-CAF2 INTERFACE [J].

TROMP, RM ;

REUTER, MC .

PHYSICAL REVIEW LETTERS, 1988, 61 (15) :1756-1759

← 1 →