DETERMINATION OF INTERFACE STATES FOR CAF2/SI(111) FROM NEAR-EDGE X-RAY-ABSORPTION MEASUREMENTS

被引:86
作者
HIMPSEL, FJ
KARLSSON, UO
MORAR, JF
RIEGER, D
YARMOFF, JA
机构
关键词
D O I
10.1103/PhysRevLett.56.1497
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:1497 / 1500
页数:4
相关论文
共 29 条
[1]   FABRICATION OF MOSFETS IN SI/CAF2/SI HETEROEPITAXIAL STRUCTURES [J].
ASANO, T ;
KURIYAMA, Y ;
ISHIWARA, H .
ELECTRONICS LETTERS, 1985, 21 (09) :386-387
[2]   ATOMIC NATURE OF THE LII,III WHITE LINES IN CA, SC, AND TI METALS AS REVEALED BY RESONANT PHOTOEMISSION [J].
BARTH, J ;
GERKEN, F ;
KUNZ, C .
PHYSICAL REVIEW B, 1983, 28 (06) :3608-3611
[3]   DIRECT STRUCTURAL STUDY OF CL ON SI[111] AND GE[111] SURFACES - NEW CONCLUSIONS [J].
CITRIN, PH ;
ROWE, JE ;
EISENBERGER, P .
PHYSICAL REVIEW B, 1983, 28 (04) :2299-2301
[4]   MBE-GROWN FLUORIDE FILMS - A NEW CLASS OF EPITAXIAL DIELECTRICS [J].
FARROW, RFC ;
SULLIVAN, PW ;
WILLIAMS, GM ;
JONES, GR ;
CAMERON, DC .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :415-420
[5]   DETERMINATION OF THE FERMI-LEVEL PINNING POSITION AT SI(111) SURFACES [J].
HIMPSEL, FJ ;
HOLLINGER, G ;
POLLAK, RA .
PHYSICAL REVIEW B, 1983, 28 (12) :7014-7018
[6]   STRUCTURE AND BONDING AT THE CAF2/SI (111) INTERFACE [J].
HIMPSEL, FJ ;
HILLEBRECHT, FU ;
HUGHES, G ;
JORDAN, JL ;
KARLSSON, UO ;
MCFEELY, FR ;
MORAR, JF ;
RIEGER, D .
APPLIED PHYSICS LETTERS, 1986, 48 (09) :596-598
[7]   ELECTRONIC-STRUCTURE OF THE ANNEALED GE(111) AND SI(111) SURFACES - SIMILARITIES IN LOCAL BONDING [J].
HIMPSEL, FJ ;
EASTMAN, DE ;
HEIMANN, P ;
REIHL, B ;
WHITE, CW ;
ZEHNER, DM .
PHYSICAL REVIEW B, 1981, 24 (02) :1120-1123
[8]   OBSERVATION OF A TRUE INTERFACE STATE IN STRAINED-LAYER CU ADSORPTION ON RU (0001) [J].
HOUSTON, JE ;
PEDEN, CHF ;
FEIBELMAN, PJ ;
HAMANN, DR .
PHYSICAL REVIEW LETTERS, 1986, 56 (04) :375-377
[9]  
KARKSSON UO, UNPUB J VAC SCI TECH
[10]   EVIDENCE FOR A SURFACE-STATE EXCITON ON GAAS(110) [J].
LAPEYRE, GJ ;
ANDERSON, J .
PHYSICAL REVIEW LETTERS, 1975, 35 (02) :117-120