FABRICATION OF MOSFETS IN SI/CAF2/SI HETEROEPITAXIAL STRUCTURES

被引：26

作者：

ASANO, T

KURIYAMA, Y

ISHIWARA, H

机构：

来源：

ELECTRONICS LETTERS | 1985年 / 21卷 / 09期

关键词：

D O I：

10.1049/el:19850275

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：386 / 387

页数：2

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[1] AN EPITAXIAL SI/INSULATOR/SI STRUCTURE PREPARED BY VACUUM DEPOSITION OF CAF2 AND SILICON
ASANO, T
ISHIWARA, H
[J]. THIN SOLID FILMS, 1982, 93 (1-2) : 143 - 150
[2] EPITAXIAL-GROWTH OF SI FILMS ON CAF2/SI STRUCTURES WITH THIN SI LAYERS PREDEPOSITED AT ROOM-TEMPERATURE
ASANO, T
ISHIWARA, H
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) : 3566 - 3570
[3] SILICON INSULATOR HETERO-EPITAXIAL STRUCTURES FORMED BY VACUUM DEPOSITION OF CAF2 AND SI
ISHIWARA, H
ASANO, T
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (01) : 66 - 68
[4] FABRICATION OF METAL EPITAXIAL INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS USING MOLECULAR-BEAM EPITAXY OF CAF2 ON SI
SMITH, TP
PHILLIPS, JM
AUGUSTYNIAK, WM
STILES, PJ
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (08) : 907 - 909
[5] GROWTH OF SINGLE-CRYSTAL AND POLYCRYSTALLINE INSULATING FLUORIDE FILMS ON SEMICONDUCTORS BY MOLECULAR-BEAM EPITAXY
SULLIVAN, PW
COX, TI
FARROW, RFC
JONES, GR
GASSON, DB
SMITH, CS
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03): : 731 - 732