FABRICATION OF METAL EPITAXIAL INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS USING MOLECULAR-BEAM EPITAXY OF CAF2 ON SI

被引：75

作者：

SMITH, TP ^{[1
]}

PHILLIPS, JM ^{[1
]}

AUGUSTYNIAK, WM ^{[1
]}

STILES, PJ ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

关键词：

D O I：

10.1063/1.95410

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：907 / 909

页数：3

共 6 条

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JONES, GR
CAMERON, DC
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 415 - 420
[2] ISHIZAKA A, 1982, 2ND P INT S MOL BEAM, P183
[3] THEORY OF THE ELECTRONIC-STRUCTURE OF THE SI-SIO2 INTERFACE
LAUGHLIN, RB
JOANNOPOULOS, JD
CHADI, DJ
[J]. PHYSICAL REVIEW B, 1980, 21 (12): : 5733 - 5744
[4] EPITAXIAL-GROWTH OF ALKALINE-EARTH FLUORIDES ON SEMICONDUCTORS
PHILLIPS, JM
FELDMAN, LC
GIBSON, JM
MCDONALD, ML
[J]. THIN SOLID FILMS, 1983, 107 (03) : 217 - 226
[5] PHILLIPS JM, 1984, P MATLS RES SOC S, V25, P381
[6] WINTERSGILL M, 1980, J APPL PHYS, V50, P8259