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- [2] AN EPITAXIAL SI/INSULATOR/SI STRUCTURE PREPARED BY VACUUM DEPOSITION OF CAF2 AND SILICON[J]. THIN SOLID FILMS, 1982, 93 (1-2) : 143 - 150ASANO, TISHIWARA, H
- [3] ASANO T, 1982, JPN J APPL PHYS, V21, P630
- [4] MBE-GROWN FLUORIDE FILMS - A NEW CLASS OF EPITAXIAL DIELECTRICS[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 415 - 420FARROW, RFCSULLIVAN, PWWILLIAMS, GMJONES, GRCAMERON, DC
- [5] THIN-FILM CAF2 INORGANIC ELECTRON RESIST AND OPTICAL-READ STORAGE MEDIUM[J]. APPLIED PHYSICS LETTERS, 1982, 41 (11) : 1102 - 1104HARRISON, TRMANKIEWICH, PMDAYEM, AH
- [6] SILICON INSULATOR HETERO-EPITAXIAL STRUCTURES FORMED BY VACUUM DEPOSITION OF CAF2 AND SI[J]. APPLIED PHYSICS LETTERS, 1982, 40 (01) : 66 - 68ISHIWARA, HASANO, T
- [7] ISHIWARA H, 1982, COMMUNICATION
- [8] RUTHERFORD BACKSCATTERING CHANNELING AND TRANSMISSION ELECTRON-MICROSCOPY ANALYSIS OF EPITAXIAL BAF2 FILMS ON GE AND INP[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02): : 246 - 249PHILLIPS, JMFELDMAN, LCGIBSON, JMMCDONALD, ML
- [9] PHILLIPS JM, UNPUB J VAC SCI TECH
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