ELECTRONIC-STRUCTURES OF SI-BASED MANMADE CRYSTALS

被引：16

作者：

SUGAHARA, S

SUGIURA, O

MATSUMURA, M

机构：

[1] Department of Physical Electronics, Tokyo Institute of Technology, Oh-okayama, Tokyo

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 1B期

关键词：

MANMADE CRYSTAL; ELECTRONIC STRUCTURE; SI; GE; DIRECT SEMICONDUCTOR; DEEP LEVEL;

D O I：

10.1143/JJAP.32.384

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electronic structures have been calculated for Si-based manmade crystals with homogeneous strain using a tight-binding sp3s* model. Interesting properties, such as direct transition and pseudonarrow bandgap, appear especially in crystals where two monolayers of non-Si atoms are stacked in many layers of Si atoms along the (111) orientation.

引用

页码：384 / 388

页数：5

共 7 条

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