INADVERTENT IMPURITY SHEETS IN SEMICONDUCTORS

被引：10

作者：

HJALMARSON, HP

机构：

来源：

关键词：

D O I：

10.1016/S0749-6036(85)80003-3

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：379 / 383

页数：5

共 17 条

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[7] HJALMARSON HP, 1979, THESIS U ILLINOIS
[8] ELECTRICAL-PROPERTIES OF SI-DOPED ALXGA1-XAS LAYERS GROWN BY MBE
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