AMMONIA ADSORPTION AND DECOMPOSITION ON THE GAAS(100)-C(8X2) SURFACE

被引:11
作者
APEN, E [1 ]
GLAND, JL [1 ]
机构
[1] UNIV MICHIGAN,DEPT CHEM,ANN ARBOR,MI 48109
关键词
D O I
10.1016/0039-6028(94)90195-3
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The effect of ammonia exposure and substrate temperature on the reaction of ammonia with GaAs(100)-c(8 x 2) has been studied using temperature programmed desorption (TPD), X-ray photoelectron spectroscopy (XPS), and high resolution electron energy lass spectroscopy (HREELS). TPD data indicate that thermal decomposition of ammonia occurs at moderate temperatures (250 K). Above 250 K, recombinative desorption of ammonia is the dominant reaction mechanism. The appearance of the NH2 deformation mode at low exposure and temperature indicates thermal decomposition of ammonia on the GaAs(100)-c(8 x 2) surface.
引用
收藏
页码:301 / 307
页数:7
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