FIELD EFFECT TRANSISTOR BASED ON A BI-CRYSTAL GRAIN BOUNDARY JOSEPHSON JUNCTION

被引：26

作者：

Ivanov, Z. G. ^{[1
]}

Stepantsov, E. A. ^{[2
]}

Tzalenchuk, A. Ya. ^{[2
]}

Shekhter, R. I.

Claeson, T.

机构：

[1] Chalmers Univ Technol, Dept Phys, S-41296 Gothenburg, Sweden

[2] Russian Acad Sci, Inst Crystallog, 59 Leninski Pr, Moscow 117333, Russia

来源：

IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY | 1993年 / 3卷 / 01期

关键词：

D O I：

10.1109/77.234013

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have developed a planar field effect device consisting of an artificial grain boundary junction in an Y iBa(2)Cu(3)O(x) (YBCO) microbridge which was covered by a 300 nm amorphous SrTiO3 layer and a 4 mu m wide gate electrode. The layers were grown on an Y-ZrO2 bi-crystal. The current transport through the weak link, connecting the superconducting drain and source electrodes, was regulated by the voltage of the insulated gate. We have studied devices with different misorientaion angles, theta, between the two halves of the bi-crystal. For 45 degrees non-symmetric tilt grain boundaries, we have observed a strong (more than 50%) enhancement of the supercurrent at positive gate voltage and almost no change, or a slight decrease, at negative voltage. A theoretical model of the device is discussed.

引用

页码：2925 / 2928

页数：4