OPTICALLY PUMPED INTERSUBBAND LASERS BASED ON QUANTUM-WELLS

被引:28
作者
AFZALIKUSHAA, A
HADDAD, GI
NORRIS, TB
机构
[1] Solid-State Electronics Laboratory, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor
基金
美国国家航空航天局;
关键词
D O I
10.1109/3.341717
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A far infrared (FIR) laser based on intersubband transitions in quantum wells is proposed where a pumping laser is used to create population inversion in the structure. The goal is to develop a structure which operates essentially as a 4-level laser, to minimize bottlenecking of the lower laser state. Multiple quantum wells can be used in the active layer of these structures to enhance the laser gain and the minimum required reflectivity in the cavity structure. The possibility of using both conduction and valence band quantum-well structures are investigated. Our study shows that, due to high intersubband scattering rates in the valence band structure, the creation of population inversion is more difficult and requires a high pumping power density while in the conduction band structure, population inversion can be achieved by a moderate pumping power density. The maximum population inversion in the conduction band structure is estimated to be 2.1 x 10(11) cm2, which requires a pumping power density 2 kWcm-2 for a single quantum well. The threshold power as well as the minimum required reflectivity of the cavity structure for the conduction band scheme are estimated for different well numbers.
引用
收藏
页码:135 / 143
页数:9
相关论文
共 18 条
[1]  
AFZALIKUSHAA A, UNPUB PHYS REV B
[2]  
AFZALIKUSHAA A, 1993, 4TH INT S SPAC TER T
[3]   FAR-INFRARED EMISSION AND ABSORPTION BY HOT CARRIERS IN SUPERLATTICES [J].
ALLEN, SJ ;
BROZAK, G ;
COLAS, E ;
DEROSA, F ;
ENGLAND, P ;
HARBISON, J ;
HELM, M ;
FLOREZ, L ;
LEADBEATER, M .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1992, 7 (3B) :B1-B5
[4]  
BALES JW, 1990, SPIE P, V1283, P74
[5]   EVALUATION OF THE FEASIBILITY OF A FAR-INFRARED LASER BASED ON INTERSUBBAND TRANSITIONS IN GAAS QUANTUM WELLS [J].
BORENSTAIN, SI ;
KATZ, J .
APPLIED PHYSICS LETTERS, 1989, 55 (07) :654-656
[6]   SATURATION OF INTERSUBBAND TRANSITIONS IN P-TYPE SEMICONDUCTOR QUANTUM WELLS [J].
CHANG, YC ;
JAMES, RB .
PHYSICAL REVIEW B, 1989, 39 (17) :12672-12681
[7]  
DUMKE WP, 1975, IEEE J QUANTUM ELECT, VQE11, P400, DOI 10.1109/JQE.1975.1068627
[8]   EVALUATION OF SOME SCATTERING TIMES FOR ELECTRONS IN UNBIASED AND BIASED SINGLE-QUANTUM-WELL AND MULTIPLE-QUANTUM-WELL STRUCTURES [J].
FERREIRA, R ;
BASTARD, G .
PHYSICAL REVIEW B, 1989, 40 (02) :1074-1086
[9]   OBSERVATION OF GRATING-INDUCED INTERSUBBAND EMISSION FROM GAAS/ALGAAS SUPERLATTICES [J].
HELM, M ;
COLAS, E ;
ENGLAND, P ;
DEROSA, F ;
ALLEN, SJ .
APPLIED PHYSICS LETTERS, 1988, 53 (18) :1714-1716
[10]   FEASIBILITY OF FAR-INFRARED LASERS USING MULTIPLE SEMICONDUCTOR QUANTUM-WELLS [J].
HU, Q ;
FENG, SC .
APPLIED PHYSICS LETTERS, 1991, 59 (23) :2923-2925