OPTICALLY PUMPED INTERSUBBAND LASERS BASED ON QUANTUM-WELLS

被引:28
作者
AFZALIKUSHAA, A
HADDAD, GI
NORRIS, TB
机构
[1] Solid-State Electronics Laboratory, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor
基金
美国国家航空航天局;
关键词
D O I
10.1109/3.341717
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A far infrared (FIR) laser based on intersubband transitions in quantum wells is proposed where a pumping laser is used to create population inversion in the structure. The goal is to develop a structure which operates essentially as a 4-level laser, to minimize bottlenecking of the lower laser state. Multiple quantum wells can be used in the active layer of these structures to enhance the laser gain and the minimum required reflectivity in the cavity structure. The possibility of using both conduction and valence band quantum-well structures are investigated. Our study shows that, due to high intersubband scattering rates in the valence band structure, the creation of population inversion is more difficult and requires a high pumping power density while in the conduction band structure, population inversion can be achieved by a moderate pumping power density. The maximum population inversion in the conduction band structure is estimated to be 2.1 x 10(11) cm2, which requires a pumping power density 2 kWcm-2 for a single quantum well. The threshold power as well as the minimum required reflectivity of the cavity structure for the conduction band scheme are estimated for different well numbers.
引用
收藏
页码:135 / 143
页数:9
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