STRESS EFFECT OF GOLD-DOPED AND GAMMA-IRRADIATED SCHOTTKY-BARRIER DIODES

被引:5
作者
CHINO, KI
OKAMOTO, H
ARIYOSHI, H
MIZUSHIMA, Y
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D O I
10.1143/JJAP.8.502
中图分类号
O59 [应用物理学];
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摘要
[No abstract available]
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页码:502 / +
页数:1
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[2]   EFFECT OF GENERATION-RECOMBINATION CENTERS ON STRESS-DEPENDENCE OF SI P-N JUNCTION CHARACTERISTICS [J].
KRESSEL, H ;
ELSEA, A .
SOLID-STATE ELECTRONICS, 1967, 10 (03) :213-&