EFFECT OF GENERATION-RECOMBINATION CENTERS ON STRESS-DEPENDENCE OF SI P-N JUNCTION CHARACTERISTICS

被引：23

作者：

KRESSEL, H

ELSEA, A

机构：

来源：

SOLID-STATE ELECTRONICS | 1967年 / 10卷 / 03期

关键词：

D O I：

10.1016/0038-1101(67)90076-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：213 / &

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