REFRACTORY SELF-ALIGNED GATE TECHNOLOGY FOR GAAS MICROWAVE FETS AND MMICS

被引：10

作者：

GEISSBERGER, AE

SADLER, RA

GRIFFIN, EL

BAHL, IJ

BALZAN, ML

机构：

来源：

ELECTRONICS LETTERS | 1987年 / 23卷 / 20期

关键词：

INTEGRATED CIRCUITS; MONOLITHIC - Microwaves - SEMICONDUCTING GALLIUM ARSENIDE;

D O I：

10.1049/el:19870750

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new refractory self-aligned gate technology for fabrication of field-effect transistors (FETs) with low gate resistance and improved breakdown voltage is described. The asymmetric-n plus , planarized-gate process uses 1 mu m optical lithography to produce 0. 5 mu m-gate-length FETs with very low gate resistance. The process is suitable for high-volume small-signal and power MMIC production.

引用

页码：1073 / 1075

页数：3