COMPARISON OF LOW-TEMPERATURE AND HIGH-TEMPERATURE REFRACTORY-METAL SILICIDES SELF-ALIGNED GATE ON GAAS

被引：31

作者：

KWOK, SP

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1986年 / 4卷 / 06期

关键词：

D O I：

10.1116/1.583462

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1383 / 1391

页数：9

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