SILICON-NITRIDE FROM MICROWAVE PLASMA - FABRICATION AND CHARACTERIZATION

被引：11

作者：

TESSIER, Y

KLEMBERGSAPIEHA, JE

POULINDANDURAND, S

WERTHEIMER, MR

GUJRATHI, S

机构：

[1] ECOLE POLYTECH,DEPT GEN PHYS,MONTREAL H3C 3A7,QUEBEC,CANADA

[2] UNIV MONTREAL,DEPT PHYS,PHYS NUCL LAB,MONTREAL H3C 3J7,QUEBEC,CANADA

来源：

CANADIAN JOURNAL OF PHYSICS | 1987年 / 65卷 / 08期

关键词：

D O I：

10.1139/p87-132

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：859 / 863

页数：5

共 23 条

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[7]

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[8]

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[9] AMORPHOUS-SILICON SILICON-OXYNITRIDE FIELD-EFFECT TRANSISTORS [J].

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[10]

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