OPTOELECTRONIC RESONANT CAVITY TECHNOLOGY BASED ON INVERSION CHANNEL DEVICES

被引：11

作者：

EVALDSSON, PA ^{[1
]}

DARYANANI, S ^{[1
]}

COOKE, P ^{[1
]}

TAYLOR, GW ^{[1
]}

机构：

[1] UNIV BRADFORD,BRADFORD BD7 1DP,W YORKSHIRE,ENGLAND

来源：

OPTICAL AND QUANTUM ELECTRONICS | 1992年 / 24卷 / 02期

关键词：

D O I：

10.1007/BF00625820

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper the implementation of the inversion channel technology in a vertical cavity configuration is demonstrated. It is shown that by using a universal processing sequence a bistable surface emitting laser, a resonant cavity detector and a heterostructure field effect transistor (HFET) can all be realized from a single epitaxial growth. The surface emitting double heterostructure opto-electronic switch (DOES) laser exhibits a pulsed threshold current of 10 mA for a 14-mu-m diameter device. The resonant cavity detector achieved a peak responsivity of 0.6 AW-1 in the HFET mode and 19 AW-1 when operated in phototransistor mode. The HFET had a peak transconductance of 40 mS mm-1 and a peak source to drain current density of 120 mA mm-1.

引用

页码：S133 / S146

页数：14

共 26 条

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