STRAINED MULTIQUANTUM WELL DOUBLE HETEROSTRUCTURE OPTOELECTRONIC SWITCH AND ASSOCIATED HETEROJUNCTION FET

The first operation of the double heterostructure optoelectronic switch (DOES) as an edge emitting, strained multi-quantum well laser is reported. Excellent electrical switching parameters are obtained in broad area devices with lasing threshold current densities of 1.3 kA/cm2 for 500-mu-m long cavities. The associated heterojunction FET incorporated into the structure has been separately processed to give a g(m) = 65 mS/mm for a 2-mu-m gate length, with V(th) = + 0.7 V. The simultaneous operation of both devices is essential for future optoelectronic integration.