THE SEMICONDUCTOR JUNCTION IGNITER - A NOVEL RF AND ESD INSENSITIVE ELECTROEXPLOSIVE DEVICE

被引：8

作者：

BAGINSKI, TA

HODEL, AS

机构：

[1] Department of Electrical Engineering, Auburn University, Auburn, AL

来源：

IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS | 1993年 / 29卷 / 02期

关键词：

Explosives;

D O I：

10.1109/28.216552

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The description and characterization of a novel, monolithic, solid-state electro-explosive device is presented. The structure is inherently immune to radio frequency (RF) radiation and also offers protection from electrostatic discharge (ESD). Interconnection to the device can be accomplished by a variety of techniques such as soldering, epoxy, etc. Standard microelectronic techniques were utilized for fabrication. The devices can be manufactured very economically and in large quantities.

引用

收藏

页码：412 / 418

页数：7

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