SELF-CONSISTENT ELECTRONIC-STRUCTURE OF REALISTIC MODELS OF AMORPHOUS HYDROGENATED SILICON

被引：54

作者：

GUTTMAN, L ^{[1
]}

FONG, CY ^{[1
]}

机构：

[1] UNIV CALIF DAVIS,DAVIS,CA 95616

来源：

PHYSICAL REVIEW B | 1982年 / 26卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.26.6756

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：6756 / 6775

页数：20

相关论文

共 29 条

[1] ELECTRONIC STATES AND TOTAL ENERGIES IN HYDROGENATED AMORPHOUS-SILICON
ALLAN, DC
JOANNOPOULOS, JD
POLLARD, WB
[J]. PHYSICAL REVIEW B, 1982, 25 (02) : 1065 - 1080
[2] ALLAN DC, 1980, PHYS REV LETT, V44, P43, DOI 10.1103/PhysRevLett.44.43
[3] HYDROGEN-ASSOCIATED DISORDER MODES IN AMORPHOUS SI-H FILMS
CARLOS, WE
TAYLOR, PC
[J]. PHYSICAL REVIEW LETTERS, 1980, 45 (05) : 358 - 362
[4] THEORETICAL STUDIES OF ELECTRONIC STATES PRODUCED BY HYDROGENATION OF AMORPHOUS SILICON
CHING, WY
LAM, DJ
LIN, CC
[J]. PHYSICAL REVIEW LETTERS, 1979, 42 (12) : 805 - 808
[5] STRUCTURAL DISORDER AND ELECTRONIC PROPERTIES OF AMORPHOUS SILICON
CHING, WY
LIN, CC
GUTTMAN, L
[J]. PHYSICAL REVIEW B, 1977, 16 (12): : 5488 - 5498
[6] ELECTRONIC STATES AND BONDING CONFIGURATIONS IN HYDROGENATED AMORPHOUS-SILICON
CHING, WY
LAM, DJ
LIN, CC
[J]. PHYSICAL REVIEW B, 1980, 21 (06): : 2378 - 2387
[7] OPTICAL DIELECTRIC FUNCTION OF INTRINSIC AMORPHOUS SILICON
CHING, WY
LIN, CC
[J]. PHYSICAL REVIEW B, 1978, 18 (12): : 6829 - 6833
[8] DISORDER AND THE OPTICAL-ABSORPTION EDGE OF HYDROGENATED AMORPHOUS-SILICON
CODY, GD
TIEDJE, T
ABELES, B
BROOKS, B
GOLDSTEIN, Y
[J]. PHYSICAL REVIEW LETTERS, 1981, 47 (20) : 1480 - 1483
[9] SMALL-ANGLE-SCATTERING EVIDENCE OF VOIDS IN HYDROGENATED AMORPHOUS SILICON
DANTONIO, P
KONNERT, JH
[J]. PHYSICAL REVIEW LETTERS, 1979, 43 (16) : 1161 - 1163
[10] FONG CY, 1981, TETRAHEDRALLY BONDED, P125