ELECTRONIC STATES AND TOTAL ENERGIES IN HYDROGENATED AMORPHOUS-SILICON

被引：78

作者：

ALLAN, DC ^{[1
]}

JOANNOPOULOS, JD ^{[1
]}

POLLARD, WB ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV, DEPT PHYS, RALEIGH, NC 27650 USA

来源：

PHYSICAL REVIEW B | 1982年 / 25卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.25.1065

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：1065 / 1080

页数：16

相关论文

共 67 条

[1] DENSITY OF STATES IN GAP OF TETRAHEDRALLY BONDED AMORPHOUS-SEMICONDUCTORS
ADLER, D
[J]. PHYSICAL REVIEW LETTERS, 1978, 41 (25) : 1755 - 1758
[2] ALLAN DC, 1980, PHYS REV LETT, V44, P43, DOI 10.1103/PhysRevLett.44.43
[3] SCATTERING-THEORETIC METHOD FOR DEFECTS IN SEMICONDUCTORS .2. SELF-CONSISTENT FORMULATION AND APPLICATION TO THE VACANCY IN SILICON
BERNHOLC, J
LIPARI, NO
PANTELIDES, ST
[J]. PHYSICAL REVIEW B, 1980, 21 (08): : 3545 - 3562
[4] SCATTERING-THEORETIC METHOD FOR DEFECTS IN SEMICONDUCTORS .1. TIGHT-BINDING DESCRIPTION OF VACANCIES IN SI, GE, AND GAAS
BERNHOLC, J
PANTELIDES, ST
[J]. PHYSICAL REVIEW B, 1978, 18 (04): : 1780 - 1789
[5] DEFECT CREATION AND HYDROGEN EVOLUTION IN AMORPHOUS SI-H
BIEGELSEN, DK
STREET, RA
TSAI, CC
KNIGHTS, JC
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) : 285 - 290
[6] HYDROGEN EVOLUTION AND DEFECT CREATION IN AMORPHOUS SI-H ALLOYS
BIEGELSEN, DK
STREET, RA
TSAI, CC
KNIGHTS, JC
[J]. PHYSICAL REVIEW B, 1979, 20 (12): : 4839 - 4846
[7] QUANTITATIVE-ANALYSIS OF HYDROGEN IN GLOW-DISCHARGE AMORPHOUS SILICON
BRODSKY, MH
FRISCH, MA
ZIEGLER, JF
LANFORD, WA
[J]. APPLIED PHYSICS LETTERS, 1977, 30 (11) : 561 - 563
[8] BRODSKY MH, 1979, AMORPHOUS SEMICONDUC
[9] SIMS ANALYSIS OF DEUTERIUM DIFFUSION IN HYDROGENATED AMORPHOUS SILICON
CARLSON, DE
MAGEE, CW
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (01) : 81 - 83
[10] CARLSON DE, 1980, AMORPHOUS SEMICONDUC, P287

← 1 2 3 4 5 6 7 →