SCATTERING-THEORETIC METHOD FOR DEFECTS IN SEMICONDUCTORS .2. SELF-CONSISTENT FORMULATION AND APPLICATION TO THE VACANCY IN SILICON

被引：235

作者：

BERNHOLC, J

LIPARI, NO

PANTELIDES, ST

机构：

来源：

PHYSICAL REVIEW B | 1980年 / 21卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.21.3545

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3545 / 3562

页数：18

共 71 条

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[8] THEORY OF BINDING-ENERGIES OF ACCEPTORS IN SEMICONDUCTORS
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[J]. PHYSICAL REVIEW B, 1977, 15 (10): : 4935 - 4947
[9] SCATTERING-THEORETIC METHOD FOR DEFECTS IN SEMICONDUCTORS .1. TIGHT-BINDING DESCRIPTION OF VACANCIES IN SI, GE, AND GAAS
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[10] BERNHOLC J, UNPUBLISHED