SCATTERING-THEORETIC METHOD FOR DEFECTS IN SEMICONDUCTORS .2. SELF-CONSISTENT FORMULATION AND APPLICATION TO THE VACANCY IN SILICON

被引：235

作者：

BERNHOLC, J

LIPARI, NO

PANTELIDES, ST

机构：

来源：

PHYSICAL REVIEW B | 1980年 / 21卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.21.3545

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3545 / 3562

页数：18

共 71 条

[31] LOCALIZED DEFECTS IN III-V SEMICONDUCTORS
JAROS, M
BRAND, S
[J]. PHYSICAL REVIEW B, 1976, 14 (10): : 4494 - 4505
[32] LOCAL FORMALISM FOR STUDY OF VERY LARGE BONDED SYSTEMS
JOANNOPOULOS, JD
MELE, EJ
[J]. SOLID STATE COMMUNICATIONS, 1976, 20 (08) : 729 - 732
[33] GAUSSIAN REPRESENTATIONS OF COVALENT WAVE-FUNCTIONS - SILICON
KANE, EO
[J]. PHYSICAL REVIEW B, 1976, 13 (08): : 3478 - 3483
[34] DIRECT CALCULATION OF WANNIER FUNCTIONS - SI VALENCE BANDS
KANE, EO
KANE, AB
[J]. PHYSICAL REVIEW B, 1978, 17 (06): : 2691 - 2704
[35] COMMENT ON ELECTRONIC-STRUCTURE OF NEUTRAL VACANCY IN SILICON
KAUFFER, E
PECHEUR, P
GERL, M
[J]. PHYSICAL REVIEW B, 1977, 15 (08): : 4107 - 4108
[36] KAUFFER E, 1976, J PHYS C, V9, P2913
[37] SELF-CONSISTENT EQUATIONS INCLUDING EXCHANGE AND CORRELATION EFFECTS
KOHN, W
SHAM, LJ
[J]. PHYSICAL REVIEW, 1965, 140 (4A): : 1133 - &
[38] KOHN W, 1957, SOLID STATE PHYSICS, V5
[39] KOSTER GF, 1954, PHYS REV, V94, P1392, DOI 10.1103/PhysRev.94.1392
[40] KOSTER GF, 1954, PHYS REV, V95, P1165