THE 3942-CM-1 OPTICAL BAND IN IRRADIATED SILICON

被引：21

作者：

DAVIES, G

LIGHTOWLERS, EC

STAVOLA, M

BERGMAN, K

SVENSSON, B

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

[2] UNIV LUND,DEPT SOLID STATE PHYS,S-22101 LUND,SWEDEN

[3] FORSVARETS FORSKNINGSANSTALT,S-58111 LINKOPING,SWEDEN

来源：

PHYSICAL REVIEW B | 1987年 / 35卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.35.2755

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2755 / 2766

页数：12

共 49 条

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[8] THE SYMMETRY OF THE 875 MEV GA-RELATED LUMINESCENCE BAND IN IRRADIATED SILICON [J].

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[9] THE PRODUCTION AND DESTRUCTION OF THE C-RELATED 969 MEV ABSORPTION-BAND IN SI [J].

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[10] CARBON-RELATED RADIATION-DAMAGE CENTERS IN CZOCHRALSKI SILICON [J].

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WILKES, JG .

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