UNSHIELDED MR ELEMENTS WITH PATTERNED EXCHANGE-BIASING

被引：63

作者：

TSANG, C ^{[1
]}

机构：

[1] IBM CORP,INST MAGNET RECORDING,ARMONK,NY 10504

来源：

IEEE TRANSACTIONS ON MAGNETICS | 1989年 / 25卷 / 05期

关键词：

D O I：

10.1109/20.42403

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：3692 / 3694

页数：3

相关论文

共 6 条

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[3] MAGNETICS OF SMALL MAGNETORESISTIVE SENSORS
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[4] STUDY OF DOMAIN FORMATION IN SMALL PERMALLOY MAGNETORESISTIVE ELEMENTS
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[5] FABRICATION AND WAFER TESTING OF BARBER-POLE AND EXCHANGE-BIASED NARROW-TRACK MR SENSORS
TSANG, C
FONTANA, RE
[J]. IEEE TRANSACTIONS ON MAGNETICS, 1982, 18 (06) : 1149 - 1151
[6] TSANG C, 1987, Patent No. 4663685