1.5 MU-M GAINASP/INP DISTRIBUTED REFLECTOR (DR) LASERS WITH SCH STRUCTURE

被引：10

作者：

ARIMA, I

SHIM, JI

ARAI, S

MORITA, I

SOMCHAL, R

SUEMATSU, Y

KOMORI, K

机构：

[1] Department of Physical Electronics, Tokyo Institute of Technology

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1990年 / 2卷 / 06期

关键词：

D O I：

10.1109/68.56594

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Appreciably large differential quantum efficiency Ωdf with one-directional output operation was obtained in 1.5 μm distributed reflector (DR) lasers, using a thin active layer of 50 nm and the SCH structure. Ωdf of the DR lasers was experimentally confirmed to be two times that of DFB lasers cleaved from the same wafer, which indicated high efficiency and high power characteristics of DR lasers. © 1990 IEEE

引用

页码：385 / 387

页数：3

共 5 条

[1] 1.5-MU-M GAINASP-INP DISTRIBUTED REFLECTOR (DR) LASER WITH HIGH-LOW REFLECTION GRATING STRUCTURE
AOKI, M
KOMORI, K
MIYAMOTO, Y
ARAI, S
SUEMATSU, Y
[J]. ELECTRONICS LETTERS, 1989, 25 (24) : 1650 - 1651
[2] SINGLE-MODE PROPERTIES OF DISTRIBUTED-REFLECTOR LASERS
KOMORI, K
ARAI, S
SUEMATSU, Y
ARIMA, I
AOKI, M
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1989, 25 (06) : 1235 - 1244
[3] KOMORI K, 1988, T IEIECJ E, V71, P435
[4] NOVEL SINGLE-LONGITUDINAL-MODE 1.5-MU-M GAINASP INP DISTRIBUTED REFLECTOR (DR) LASER
PELLEGRINO, S
KOMORI, K
SUZUKI, H
LEE, KS
ARAI, S
SUEMATSU, Y
AOKI, M
[J]. ELECTRONICS LETTERS, 1988, 24 (07) : 435 - 437
[5] SHIM JI, IN PRESS T IEICEJ

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