TUNNELING SPECTROSCOPY - SURFACE GEOMETRY AND INTERFACE POTENTIAL EFFECTS

被引：67

作者：

PITARKE, JM

FLORES, F

ECHENIQUE, PM

机构：

[1] UNIV AUTONOMA MADRID, DEPT FIS MAT CONDENSADA C-12, E-28049 MADRID, SPAIN

[2] EUSKAL HERRIKO UNIBERTSITATEA, FAK KIMIKA, E-20080 DONOSTIA, SPAIN

来源：

SURFACE SCIENCE | 1990年 / 234卷 / 1-2期

关键词：

D O I：

10.1016/0039-6028(90)90659-V

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The dependence of the oscillations observed in scanning tunneling microscopy of the tunneling conductance with applied bias voltage on the tip's curvature and the interface potential has been studied. A trial and error analysis of the distance-voltage and conductance-voltage characteristics is used to determine both the radius of the tip and the parameters fixing the interface potential. The effect of asperities in the tip and sample on the oscillations and the dependence of the oscillations on the sign of the applied bias are also discussed. © 1990.

引用

页码：1 / 16

页数：16

共 28 条

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Abramowitz M., 1965, HDB MATH FUNCTIONS

[2] ELECTRON INTERFEROMETRY AT CRYSTAL-SURFACES [J].