A COMPARISON OF BURIED OXIDE CHARACTERISTICS OF SINGLE AND MULTIPLE IMPLANT SIMOX AND BOND AND ETCH BACK WAFERS

被引：11

作者：

ANNAMALAI, NK ^{[1
]}

BOCKMAN, JF ^{[1
]}

MCGRUER, NE ^{[1
]}

CHAPSKI, J ^{[1
]}

机构：

[1] NORTHEASTERN UNIV,BOSTON,MA 02115

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1990年 / 37卷 / 06期

关键词：

D O I：

10.1109/23.101221

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The current through the buried oxides of single and multiple implant SIMOX and bond and etch back silicon-on-insulator (BESOI) wafers were measured as a function of radiation dose. From these measurements, conductivity and static capacitances were derived. High frequency capacitances were also measured. Leakage current through the buried oxide of multiple implant SIMOX is considerably less than that of single implant SIMOX (more than an order of magnitude). High frequency and static capacitances, as a function of total dose, were used to study the buried oxide - top silicon interface and the buried oxide - bottom silicon interface. Multiple implant had fewer interface traps than single implant at pre-rad and after irradiation. © 1990 IEEE

引用

页码：2001 / 2007

页数：7

共 6 条

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IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1989, 36 (06) :2187-2191

[3]

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[4]

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[6]

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