INFLUENCE OF GRAIN-SIZE ON THE TRANSPORT-PROPERTIES OF NI80FE20 AND CU THIN-FILMS

被引：25

作者：

RIJKS, TGSM

SOUR, RLH

NEERINCK, DG

DEVEIRMAN, AEM

COEHOORN, R

KOOLS, JCS

GILLIES, MF

DEJONGE, WJM

机构：

[1] PHILIPS RES LABS,5656 AA EINDHOVEN,NETHERLANDS

[2] UNIV GLASGOW,DEPT PHYS & ASTRON,GLASGOW,LANARK,SCOTLAND

来源：

IEEE TRANSACTIONS ON MAGNETICS | 1995年 / 31卷 / 06期

关键词：

D O I：

10.1109/20.489798

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The conductivity of sputtered Ta/Cu/Ta and Ta/Ni80Fe20/Ta thin films was measured for a film thickness ranging from 20 to 1500 Angstrom. The measured data were analyzed using a semi-classical model for the electron transport, that includes grain boundary scattering. It was found that in these films grain boundaries are an important source of electron scattering, in Ni80Fe20 leading to an effective spin dependence of the scattering which is considerably smaller than the intrinsic spin dependence of the scattering.

引用

页码：3865 / 3867

页数：3

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