STABLE OPERATION IN 0.87-MU-M LIGHT-EMITTING DIODE ON SI SUBSTRATE USING AL-FREE MATERIALS

被引：6

作者：

EGAWA, T ^{[1
]}

DONG, J ^{[1
]}

MATSUMOTO, K ^{[1
]}

JIMBO, T ^{[1
]}

UMENO, M ^{[1
]}

机构：

[1] NIPPON SANSO CORP, TSUKUBA RES LAB, TSUKUBA, IBARAKI 305, JAPAN

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1995年 / 7卷 / 11期

关键词：

D O I：

10.1109/68.473466

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A reliable 877-nm InGaP-GaAs light-emitting diode (LED) is grown on a Si substrate by metalorganic chemical vapor deposition. A conventional Al-contained AlGaAs-GaAs LED on a Si substrate exhibits a rapid degradation because of formation of dark-line defects (DLD's). On the contrary, an Al-free InGaP-GaAs LED on a Si substrate has no significant growth of DLD's. As a result, a stable operation for more than 1500 h has been achieved in an InGaP-GaAs LED on a Si substrate.

引用

页码：1264 / 1266

页数：3

共 11 条

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