GAAS-BASED DIODE-LASERS ON SI WITH INCREASED LIFETIME OBTAINED BY USING STRAINED INGAAS ACTIVE LAYER

被引：65

作者：

CHOI, HK ^{[1
]}

WANG, CA ^{[1
]}

KARAM, NH ^{[1
]}

机构：

[1] SPIRE CORP,BEDFORD,MA 01730

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 21期

关键词：

D O I：

10.1063/1.105921

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Strained InGaAs/AlGaAs quantum well diode lasers have been fabricated on Si substrates for the first time. A GaAs buffer layer was grown on each Si wafer by temperature-cycled organometallic vapor phase epitaxy (OMVPE). The wafer was then transferred to a second reactor for OMVPE growth of a graded-index separate-confinement heterostructure single-quantum well laser structure. For lasers with a cavity length of 1000-mu-m, room-temperature pulsed threshold current densities as low as 174 and 195 A/cm2 have been obtained for active layer compositions of In0.02Ga0.98As and In0.05Ga0.95As, respectively. One laser with an In0.05Ga0.95As active layer operated cw for 56.5 h, a record lifetime for GaAs-based diode lasers on Si.

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页码：2634 / 2635

页数：2

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