ROOM-TEMPERATURE CW OPERATION OF GAAS-ALGAAS DIODE-LASERS ON SILICON-ON-INSULATOR WAFERS

被引：4

作者：

CHOI, HK ^{[1
]}

WANG, CA ^{[1
]}

KARAM, NH ^{[1
]}

机构：

[1] SPIRE CORP,BEDFORD,MA 01730

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1991年 / 3卷 / 04期

关键词：

D O I：

10.1109/68.82089

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaAs-AlGaAs diode lasers have been fabricated on silicon-on-insulator wafers for the first time. Gain-guided graded-index separate-confinement heterostructure single-quantum-well lasers operated CW at room temperature with threshold current as low as 43 mA, differential quantum efficiency as high as 54%, and output power of more than 60 mW/facet. One device operated CW for 75 min at an output power of 1 mW/facet.

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页码：289 / 291

页数：3

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