INDIUM BOUND EXCITON LUMINESCENCE IN SILICON

被引：14

作者：

SAUER, R

SCHMID, W

WEBER, J

机构：

来源：

SOLID STATE COMMUNICATIONS | 1978年 / 27卷 / 07期

关键词：

D O I：

10.1016/0038-1098(78)90006-6

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：705 / 708

页数：4

共 24 条

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[10] STRESS STUDY OF DONOR EXCITON SATELLITES IN SILICON - EXISTENCE OF MULTIPLE DONOR-BOUND EXCITONS STRONGLY REQUESTIONED [J].

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WEBER, J .

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