STRESS STUDY OF DONOR EXCITON SATELLITES IN SILICON - EXISTENCE OF MULTIPLE DONOR-BOUND EXCITONS STRONGLY REQUESTIONED

被引：19

作者：

SAUER, R ^{[1
]}

WEBER, J ^{[1
]}

机构：

[1] UNIV STUTTGART,INST PHYS,D-7000 STUTTGART 80,FED REP GER

来源：

PHYSICAL REVIEW LETTERS | 1977年 / 39卷 / 12期

关键词：

D O I：

10.1103/PhysRevLett.39.770

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：770 / 773

页数：4

共 14 条

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[2]

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PHYSICAL REVIEW B-SOLID STATE, 1971, 3 (08) :2623-&

[8] THEORY OF TRANSPORT EFFECTS IN SEMICONDUCTORS - THERMOELECTRICITY [J].

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[9] MAGNETIC-FIELD AND STRESS-INDUCED SPLITTING OF NOVEL SHARP EMISSION-LINE SERIES IN SILICON ASSOCIATED WITH P, LI, OR B - NO BOUND MULTIPLE-EXCITON COMPLEXES [J].

SAUER, R ;

WEBER, J .

PHYSICAL REVIEW LETTERS, 1976, 36 (01) :48-51

[10]

SAUER R, 1974, 12TH P INT C PHYS SE, P42

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