共 13 条
- [1] RAMAN-SCATTERING AND PHOTOLUMINESCENCE IN BORON-DOPED AND ARSENIC-DOPED SILICON [J]. PHYSICAL REVIEW B, 1973, 7 (10): : 4547 - 4560
- [2] OPTICAL PROPERTIES OF EXCITONS BOUND TO NEUTRAL ACCEPTORS IN GAP [J]. PHYSICAL REVIEW B, 1971, 4 (06): : 1926 - &
- [3] NEW RADIATIVE RECOMBINATION PROCESSES INVOLVING NEUTRAL DONORS AND ACCEPTORS IN SILICON AND GERMANIUM [J]. PHYSICAL REVIEW, 1967, 161 (03): : 711 - &
- [4] HIGHER DONOR EXCITED STATES FOR PROLATE-SPHEROID CONDUCTION BANDS - A REEVALUATION OF SILICON AND GERMANIUM [J]. PHYSICAL REVIEW, 1969, 184 (03): : 713 - &
- [5] KAMINSKII AS, 1970, PISMA ESKP TEOR FIZ, V11, P381
- [6] KAMINSKY AS, 1970, JETP LETT, V11, P225
- [7] NEW PHOTOLUMINESCENCE LINE-SERIES SPECTRA ATTRIBUTED TO DECAY OF MULTIEXCITON COMPLEXES BOUND TO LI, B, AND P CENTERS IN SI [J]. PHYSICAL REVIEW B, 1974, 9 (02): : 723 - 726
- [10] SAUER R, 1974, 12TH P INT C PHYS SE, P42