PHOTOLUMINESCENCE AS AN INSITU TECHNIQUE TO DETERMINE SOLID-STATE AND SURFACE-PROPERTIES OF SEMICONDUCTORS IN AN ELECTROCHEMICAL-CELL - APPLICATION OF THE DEAD LAYER MODEL

被引:49
作者
SMANDEK, B [1 ]
CHMIEL, G [1 ]
GERISCHER, H [1 ]
机构
[1] MAX PLANCK GESELL,FRITZ HABER INST,FARADAY 4-6,D-1000 BERLIN 33,FED REP GER
来源
BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS | 1989年 / 93卷 / 10期
关键词
D O I
10.1002/bbpc.19890931010
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
引用
收藏
页码:1094 / 1103
页数:10
相关论文
共 51 条
[1]   THERMALLY STIMULATED CURRENTS AND LUMINESCENCE IN RUTILE (TIO2) [J].
ADDISS, RR ;
GHOSH, AK ;
WAKIM, FG .
APPLIED PHYSICS LETTERS, 1968, 12 (11) :397-&
[2]   THE TRANSPORT AND KINETICS OF MINORITY-CARRIERS IN ILLUMINATED SEMICONDUCTOR ELECTRODES [J].
ALBERY, WJ ;
BARTLETT, PN ;
HAMNETT, A ;
DAREEDWARDS, MP .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (07) :1492-1501
[3]   BIAS-DEPENDENT PHOTO-LUMINESCENCE INTENSITIES IN N-INP SCHOTTKY DIODES [J].
ANDO, K ;
YAMAMOTO, A ;
YAMAGUCHI, M .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (12) :6432-6434
[4]   PHOTOEXCITATION AND LUMINESCENCE IN REDOX PROCESSES ON GALLIUM PHOSPHIDE ELECTRODES [J].
BECKMANN, KH ;
MEMMING, R .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (03) :368-&
[5]   PHOTOLUMINESCENT PROPERTIES OF N-GAAS ELECTRODES - SIMULTANEOUS DETERMINATION OF DEPLETION WIDTHS AND SURFACE HOLE-CAPTURE VELOCITIES IN PHOTOELECTROCHEMICAL CELLS [J].
BURK, AA ;
JOHNSON, PB ;
HOBSON, WS ;
ELLIS, AB .
JOURNAL OF APPLIED PHYSICS, 1986, 59 (05) :1621-1626
[6]   HOLE INJECTION AND ELECTRO-LUMINESCENCE OF NORMAL-GAAS IN THE PRESENCE OF AQUEOUS REDOX ELECTROLYTES [J].
DECKER, F ;
PETTINGER, B ;
GERISCHER, H .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (06) :1335-1339
[7]   ELECTROLUMINESCENCE AND PHOTOLUMINESCENCE OF GAAS IN AQUEOUS REDOX ELECTROLYTES [J].
DECKER, F ;
ABRAMOVICH, M ;
MOTISUKE, P .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (05) :1173-1178
[8]   ELECTROLUMINESCENCE OF III-V-SINGLE-CRYSTAL SEMICONDUCTING ELECTRODES [J].
DECKER, F ;
PRINCE, F ;
MOTISUKE, P .
JOURNAL OF APPLIED PHYSICS, 1985, 57 (08) :2900-2904
[9]   DEEP HOLE TRAPS IN N-TYPE LIQUID ENCAPSULATED CZOCHRALSKI GAP [J].
DISHMAN, JM ;
DALY, DF ;
KNOX, WP .
JOURNAL OF APPLIED PHYSICS, 1972, 43 (11) :4693-+
[10]   LUMINESCENT PHOTOELECTROCHEMICAL CELLS - USE OF TELLURIUM-DOPED CADMIUM-SULFIDE PHOTOELECTRODES TO PROBE SURFACE RECOMBINATION DURING THE CONVERSION OF OPTICAL ENERGY TO ELECTRICITY [J].
ELLIS, AB ;
KARAS, BR .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1979, 101 (01) :236-237