TEMPERATURE-DEPENDENT CYCLOTRON RESONANCES IN N-TYPE GAAS

被引:19
作者
BATKE, E
BOLLWEG, K
MERKT, U
HU, CM
KOHLER, K
GANSER, P
机构
[1] UNIV HAMBURG,INST ANGEW PHYS,D-20355 HAMBURG 36,GERMANY
[2] FRAUNHOFER INST APPL SOLID STATE PHYS,D-79104 FREIBURG,GERMANY
来源
PHYSICAL REVIEW B | 1993年 / 48卷 / 12期
关键词
D O I
10.1103/PhysRevB.48.8761
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report temperatute-dependent cyclotron resonances of electrons in bulk GaAs in a temperature regime from about 10-300 K. Due to the nonparabolicity of the GaAs conduction band at sufficiently high temperatures and magnetic-field strengths, several individual Landau transitions are observed. A single line of strongly overlapping Landau transitions is found at higher temperatures and also in the case of small magnetic-field strength. Band coupling, electron-phonon interaction, and the electron spin influence the cyclotron resonance. However, from liquid-helium temperatures up to room temperature, the transition energies are essentially independent of temperature. Scattering times, which govern the broadening of the Landau transitions, decrease in magnitude with increasing magnetic-field strength as well as with temperature, and there is no simple relation to magnetotransport scattering times.
引用
收藏
页码:8761 / 8770
页数:10
相关论文
共 37 条
  • [1] THEORY OF CYCLOTRON-RESONANCE LINESHAPE IN A 2-DIMENSIONAL ELECTRON-SYSTEM
    ANDO, T
    [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1975, 38 (04) : 989 - 997
  • [2] RAPID-SCAN FOURIER-TRANSFORM SPECTROSCOPY OF 2-D SPACE-CHARGE LAYERS IN SEMICONDUCTORS
    BATKE, E
    HEITMANN, D
    [J]. INFRARED PHYSICS, 1984, 24 (2-3): : 189 - 197
  • [3] TEMPERATURE-INDUCED SPIN REVERSAL IN N-GAAS
    BATKE, E
    BOLLWEG, K
    MERKT, U
    KOHLER, K
    GANSER, P
    [J]. SOLID STATE COMMUNICATIONS, 1992, 83 (06) : 451 - 455
  • [4] MAGNETO-OPTIC TRANSITIONS AND NON-PARABOLICITY PARAMETERS IN THE CONDUCTION-BAND OF SEMICONDUCTORS
    BRAUN, M
    ROSSLER, U
    [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (17): : 3365 - 3377
  • [5] MODIFICATION OF THE ELECTRON-PHONON INTERACTIONS IN GAAS-GAALAS HETEROJUNCTIONS
    BRUMMELL, MA
    NICHOLAS, RJ
    HOPKINS, MA
    HARRIS, JJ
    FOXON, CT
    [J]. PHYSICAL REVIEW LETTERS, 1987, 58 (01) : 77 - 80
  • [6] MODIFICATION OF THE ELECTRON-PHONON INTERACTIONS IN GAAS-GAALAS HETEROJUNCTIONS - REPLY
    BRUMMELL, MA
    NICHOLAS, RJ
    HOPKINS, MA
    LEADLEY, DR
    HARRIS, JJ
    FOXON, CT
    [J]. PHYSICAL REVIEW LETTERS, 1987, 59 (24) : 2821 - 2821
  • [7] DASSARMA S, 1985, ANN PHYS-NEW YORK, V163, P78, DOI 10.1016/0003-4916(85)90351-3
  • [8] MODIFICATION OF THE ELECTRON-PHONON INTERACTIONS IN GAAS-GAALAS HETEROJUNCTIONS
    DEGANI, MH
    HIPOLITO, O
    [J]. PHYSICAL REVIEW LETTERS, 1987, 59 (24) : 2820 - 2820
  • [9] POLARON EFFECTS IN CYCLOTRON-RESONANCE ABSORPTION OF INSB
    DICKEY, DH
    JOHNSON, EJ
    LARSEN, DM
    [J]. PHYSICAL REVIEW LETTERS, 1967, 18 (15) : 599 - &
  • [10] DOERS M, 1988, SPRINGER SERIES SOLI, V87, P386