AN ANALYTIC POLYSILICON DEPLETION EFFECT MODEL FOR MOSFETS

被引：42

作者：

RIOS, R

ARORA, ND

HUANG, CL

机构：

[1] Digital Equipment Corporation, Hudson

来源：

IEEE ELECTRON DEVICE LETTERS | 1994年 / 15卷 / 04期

关键词：

Analytical MOSFET model - Circuit simulation - Depletion approximation - Gate oxide - Gradual channel approximation - Poisson equation - Polysilicon depletion effect model - Polysilicon gate;

D O I：

10.1109/55.285407

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel polysilicon depletion model for MOSFET devices is presented. It is shown that only simple modifications to standard analytical MOSFET models used for circuit simulations are required to account for the polysilicon depletion effect. The accuracy of the model is validated by comparing results to both simulated and measured device characteristics. It is also shown that neglecting the polysilicon depletion effect for devices with non-degenerate polysilicon gates may lead to non-physical model parameter values and large errors in the calculated intrinsic device capacitances.

引用

页码：129 / 131

页数：3

共 8 条

[1]

Arora, 1993, MOSFET MODELING VLSI

[2]

ARORA ND, 1994, IN PRESS IEEE T JUN

[3] VELOCITY OF SURFACE CARRIERS IN INVERSION-LAYERS ON SILICON [J].