GAS INCORPORATION INTO SPUTTERED FILMS

被引：241

作者：

WINTERS, HF

KAY, E

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1967年 / 38卷 / 10期

关键词：

D O I：

10.1063/1.1709043

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：3928 / &

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[1] ADAM H, 1967, 3 T INT VAC C 2 ED, V2, P351
[2] ADAM H, 1967, 3 T INT VAC C 3 ED, V2, P643
[3] MECHANISM OF INERT GAS CLEANUP IN A GASEOUS DISCHARGE
BLODGETT, KB
VANDERSLICE, TA
[J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (06) : 1017 - 1023
[4] SOME STUDIES OF THE SUPERCONDUCTING TRANSITION IN PURIFIED TANTALUM
BUDNICK, JI
[J]. PHYSICAL REVIEW, 1960, 119 (05): : 1578 - 1586
[5] EFFECT OF RESIDUAL GASES ON SUPERCONDUCTING CHARACTERISTICS OF TIN FILMS
CASWELL, HL
[J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (01) : 105 - &
[6] ION ENERGIES AT CATHODE OF A GLOW DISCHARGE
DAVIS, WD
VANDERSLICE, TA
[J]. PHYSICAL REVIEW, 1963, 131 (01): : 219 - &
[7] DONALDSON EE, PRIVATE COMMUNICATIO
[8] SUPERCONDUCTIVE FILMS MADE BY PROTECTED SPUTTERING OF TANTALUM OR NIOBIUM
FRERICHS, R
[J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (05) : 1898 - &
[9] EFFECTS OF NITROGEN METHANE + OXYGEN ON STRUCTURE + ELECTRICAL PROPERTIES OF THIN TANTALUM FILMS
GERSTENBERG, D
CALBICK, CJ
[J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (02) : 402 - &
[10] GLANG R, 1967, 3 T INT VAC C 3, V2, P643